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| Titre : |
Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications |
| Type de document : |
document électronique |
| Auteurs : |
Niccolo Rinaldi, Editeur scientifique ; Michael Schroter, Editeur scientifique |
| Editeur : |
Gistrup [Denmark] : River Publishers |
| Année de publication : |
2022 |
| Importance : |
376 p. |
| Présentation : |
ill. |
| ISBN/ISSN/EAN : |
978-1-00-333951-9 |
| Langues : |
Anglais (eng) |
| Catégories : |
Open Access Publications
|
| Tags : |
Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) Millimeter-wave (mm-Wave) Semiconductor Modeling Integrated Circuits (ICs) High-Frequency Electronics Radio Frequency (RF) Solid-State Devices BiCMOS Technology Transistor Characterization |
| Index. décimale : |
621.381 Electronique |
| Résumé : |
The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems. |
| En ligne : |
https://doi.org/10.1201/9781003339519 |
Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications [document électronique] / Niccolo Rinaldi, Editeur scientifique ; Michael Schroter, Editeur scientifique . - Gistrup (Denmark) : River Publishers, 2022 . - 376 p. : ill. ISBN : 978-1-00-333951-9 Langues : Anglais ( eng)
| Catégories : |
Open Access Publications
|
| Tags : |
Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) Millimeter-wave (mm-Wave) Semiconductor Modeling Integrated Circuits (ICs) High-Frequency Electronics Radio Frequency (RF) Solid-State Devices BiCMOS Technology Transistor Characterization |
| Index. décimale : |
621.381 Electronique |
| Résumé : |
The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems. |
| En ligne : |
https://doi.org/10.1201/9781003339519 |
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